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20000
10000
Common Emitter
V CC = 300V, V GE = ± 15V
R G = 3.9 ?
T C = 25 ℃
15
12
Common Emitter
R L = 37.5 ?
T C = 25 ℃
T C = 125 ℃
9
300 V
1000
6
V CC = 100 V
200 V
100
Eoff
Eon
3
0
20
40
60
80
100
120
140
160
0
50
100
150
200
250
300
350
Collector Current, I C [A]
Fig 13. Switching Loss vs. Collector Current
1000
I C MAX. (Pulsed)
Gate Charge, Q g [ nC ]
Fig 14. Gate Charge Characteristics
500
100
I C MAX. (Continuous)
50us
100
100us
1 ?
10
DC Operation
10
Single Nonrepetitive
1
Pulse T C = 25 ℃
Curves must be derated
linearly with increase
Safe Operating Area
V GE =20V, T C =100 C
0.1
0.3
in temperature
1
10
100
1000
1
1
10
o
100
1000
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristic
1
0.5
0.2
0.1
0.1
0.05
0.02
Collector-Emitter Voltage, V CE [V]
Fig 16. Turn-Off SOA Characteristics
0.01
0.01
single pulse
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T C
1E-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
?2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
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